Graphene‐on‐Silicon Hybrid Field‐Effect Transistors

The combination of graphene and silicon in hybrid electronic devices has attracted increasing attention over the last decade. Here, a unique technology graphene-on-silicon heterostructures as solution-gated transistors for bioelectronics applications is presented. proposed field-effect (GoSFETs) are fabricated by exploiting various conformations channel doping dimensions. demonstrate behavior with features specific to both silicon, which rationalized via comprehensive physics-based compact model purposely implemented validated against measured data. developed theory corroborates that device can be explained terms two independent carrier transport channels, are, however, strongly electrostatically coupled. Although GoSFET transconductance mobility found lower than conventional or transistors, it observed materials within contributes uniquely electrical response. Specifically, sheet acts shield channel, giving rise nonuniform potential distribution along it, impacts transport, especially at subthreshold region, due non-negligible diffusion current.